FBG20N18BC
EPC Space, LLC
EPC Space, LLC
GAN FET HEMT200V18A COTS 4FSMD-B
$313.40
Available to order
Reference Price (USD)
1+
$313.40000
500+
$310.266
1000+
$307.132
1500+
$303.998
2000+
$300.864
2500+
$297.73
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
EPC Space, LLC presents FBG20N18BC, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FBG20N18BC delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 18A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-SMD
- Package / Case: 4-SMD, No Lead
Related Products
EPC
EPC2050
Infineon Technologies
IAUC60N06S5L073ATMA1
Fairchild Semiconductor
FDMS8670AS
Harris Corporation
RF1S630SM
Rohm Semiconductor
RQ7L055BGTCR
Diodes Incorporated
DMN2451UFB4Q-7R
Diodes Incorporated
DMN10H220LQ-7
Renesas Electronics America Inc
N0436N-ZK-E1-AY
Goford Semiconductor
G1002L
IXYS