F411MR12W2M1B76BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY2B-2
$370.16
Available to order
Reference Price (USD)
1+
$370.16000
500+
$366.4584
1000+
$362.7568
1500+
$359.0552
2000+
$355.3536
2500+
$351.652
Exquisite packaging
Discount
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Discover high-performance F411MR12W2M1B76BOMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Infineon Technologies s F411MR12W2M1B76BOMA1 enhance your projects with superior quality and performance.
Specifications
- Product Status: Last Time Buy
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
- Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 7.36nF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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