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MSCSM170HM087CAG

Microchip Technology
MSCSM170HM087CAG Preview
Microchip Technology
PM-MOSFET-SIC-SBD-SP6C
$1,347.93
Available to order
Reference Price (USD)
1+
$1347.93000
500+
$1334.4507
1000+
$1320.9714
1500+
$1307.4921
2000+
$1294.0128
2500+
$1280.5335
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 4 N-Channel (Full Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1700V (1.7kV)
  • Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 3.2V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 712nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13200pF @ 1000V
  • Power - Max: 1.114kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

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