DTC114GUAT106
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS NPN 200MW UMT3
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03315
6,000+
$0.02990
15,000+
$0.02600
30,000+
$0.02340
75,000+
$0.02080
150,000+
$0.01820
Exquisite packaging
Discount
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Upgrade your projects with the DTC114GUAT106 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer outstanding durability and precision, ensuring optimal performance in any circuit. Key features include high current gain, low saturation voltage, and thermal stability. Ideal for use in power management, signal processing, and automation systems. Rohm Semiconductor guarantees top-notch quality and performance. Reach out now to learn more or request a sample!
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): -
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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