DTA123JU3HZGT106
Rohm Semiconductor
Rohm Semiconductor
DTA123JU3HZG IS A DIGITAL TRANSI
$0.39
Available to order
Reference Price (USD)
3,000+
$0.05520
6,000+
$0.04800
15,000+
$0.04080
30,000+
$0.03840
75,000+
$0.03600
150,000+
$0.03360
Exquisite packaging
Discount
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The DTA123JU3HZGT106 from Rohm Semiconductor is a premium selection in the Discrete Semiconductor Products market. Specifically designed as Transistors - Bipolar (BJT) - Single, Pre-Biased, these components provide exceptional reliability and efficiency. Features include fast switching speeds, high voltage tolerance, and compact design. They are perfect for applications in telecommunications, medical devices, and renewable energy systems. Choose Rohm Semiconductor for cutting-edge semiconductor technology. Get in touch for pricing and availability details!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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