DSS5160FDB-7
Diodes Incorporated
Diodes Incorporated
TRANS 2-PNP 1A 60V U-DFN2020-6
$0.00
Available to order
Reference Price (USD)
3,000+
$0.25128
6,000+
$0.23684
15,000+
$0.22241
30,000+
$0.22000
Exquisite packaging
Discount
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Discover high-performance DSS5160FDB-7 Bipolar Junction Transistor Arrays from Diodes Incorporated, designed for reliable and efficient circuit applications. These transistor arrays feature excellent current handling, low saturation voltage, and high-speed switching capabilities, making them ideal for amplification and switching tasks. Perfect for use in industrial automation, consumer electronics, and communication devices. Contact us today for a quote and let our experts assist you with your specific requirements!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 550mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
- Power - Max: 405mW
- Frequency - Transition: 65MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UDFN Exposed Pad
- Supplier Device Package: U-DFN2020-6 (Type B)
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