ZDT6705TA
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP DARL 120V 1A SM8
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Achieve peak performance with Diodes Incorporated's ZDT6705TA BJT Arrays, crafted for precision and durability. These arrays feature high-speed operation, low thermal resistance, and excellent matching properties, ensuring consistent results in critical applications. Commonly utilized in data acquisition, telecommunications, and energy management systems. Contact us today to discuss your project requirements and discover how we can help you succeed!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN, PNP Darlington (Dual)
- Current - Collector (Ic) (Max): 1A
- Voltage - Collector Emitter Breakdown (Max): 120V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
- Power - Max: 2.75W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-223-8
- Supplier Device Package: SM8
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