IMBG65R022M1HXTMA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET PG-TO263-
$26.96
Available to order
Reference Price (USD)
1+
$26.96000
500+
$26.6904
1000+
$26.4208
1500+
$26.1512
2000+
$25.8816
2500+
$25.612
Exquisite packaging
Discount
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Discover IMBG65R022M1HXTMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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