HS54095TZ-E
Renesas
Renesas
HS54095TZ-E - N-CHANNEL POWER MO
$0.73
Available to order
Reference Price (USD)
1+
$0.72613
500+
$0.7188687
1000+
$0.7116074
1500+
$0.7043461
2000+
$0.6970848
2500+
$0.6898235
Exquisite packaging
Discount
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Experience the power of HS54095TZ-E, a premium Transistors - FETs, MOSFETs - Single from Renesas. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, HS54095TZ-E is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 16.5Ohm @ 100mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 66 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 750mW (Ta)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-92
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
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