DMTH6005LFG-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 19.7A/100A PWRDI
$0.56
Available to order
Reference Price (USD)
1+
$0.55856
500+
$0.5529744
1000+
$0.5473888
1500+
$0.5418032
2000+
$0.5362176
2500+
$0.530632
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMTH6005LFG-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMTH6005LFG-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 19.7A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.38W (Ta), 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
Related Products
Vishay Siliconix
SIR474DP-T1-RE3
Vishay Siliconix
SQD40N06-14L_T4GE3
onsemi
NVMFWS003P03P8ZT1G
Renesas
2SJ197-T1-AZ
STMicroelectronics
STH30N65DM6-7AG
Diodes Incorporated
DMTH10H010SPSQ-13
Fairchild Semiconductor
FDM606P
Renesas Electronics America Inc
2SJ559-T1-A
STMicroelectronics
STN6N60M2
Taiwan Semiconductor Corporation