DMTH10H010SPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V PWRDI5060
$0.82
Available to order
Reference Price (USD)
2,500+
$0.87620
5,000+
$0.84760
12,500+
$0.83200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with DMTH10H010SPSQ-13 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMTH10H010SPSQ-13 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 166W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
Related Products
Fairchild Semiconductor
FDM606P
Renesas Electronics America Inc
2SJ559-T1-A
STMicroelectronics
STN6N60M2
Taiwan Semiconductor Corporation
TSM16ND50CI C0G
Infineon Technologies
IPN60R3K4CEATMA1
STMicroelectronics
STFU25N60M2-EP
Infineon Technologies
IPDQ60R055CFD7XTMA1
Nexperia USA Inc.
BUK9M31-60ELX
Renesas Electronics America Inc
2SK2364(1)-AZ
Renesas Electronics America Inc