DMTH4008LPDWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V~40V POWERDI506
$0.36
Available to order
Reference Price (USD)
1+
$0.35728
500+
$0.3537072
1000+
$0.3501344
1500+
$0.3465616
2000+
$0.3429888
2500+
$0.339416
Exquisite packaging
Discount
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Optimize your electronic circuits with Diodes Incorporated s DMTH4008LPDWQ-13, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMTH4008LPDWQ-13 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46.2A (Tc)
- Rds On (Max) @ Id, Vgs: 12.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 20V
- Power - Max: 2.67W (Ta), 39.4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type UXD)
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