DMN22M5UCA10-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V X4-DSN3221-
$0.65
Available to order
Reference Price (USD)
1+
$0.64526
500+
$0.6388074
1000+
$0.6323548
1500+
$0.6259022
2000+
$0.6194496
2500+
$0.612997
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance DMN22M5UCA10-7 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Diodes Incorporated s DMN22M5UCA10-7 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 24V
- Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
- Rds On (Max) @ Id, Vgs: 4mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 40.7nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3490pF @ 12V
- Power - Max: 960mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 10-SMD, No Lead
- Supplier Device Package: X4-DSN3221-10
Related Products
Renesas Electronics America Inc
FS50KM-2-J1#E51
Diodes Incorporated
DMN63D1LV-7
onsemi
NTMFD5C466NT1G
Microchip Technology
MSCSM170AM11CT3AG
Renesas Electronics America Inc
FS10KMJ-2#B01
Infineon Technologies
IRFHM8363TRPBF
Toshiba Semiconductor and Storage
SSM6N813R,LF
onsemi
EFC4C012NLTDG
Microchip Technology
MSCSM70TLM44C3AG
Diodes Incorporated