DMTH4008LFDFW-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 40V 11.6A 6UDFN
$0.27
Available to order
Reference Price (USD)
3,000+
$0.29259
Exquisite packaging
Discount
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DMTH4008LFDFW-7 by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMTH4008LFDFW-7 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 11.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 990mW (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (SWP) (Type F)
- Package / Case: 6-UDFN Exposed Pad
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