DMN6010SCTBQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V TO263 T&R
$1.87
Available to order
Reference Price (USD)
1+
$1.87456
500+
$1.8558144
1000+
$1.8370688
1500+
$1.8183232
2000+
$1.7995776
2500+
$1.780832
Exquisite packaging
Discount
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Boost your electronic applications with DMN6010SCTBQ-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN6010SCTBQ-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 128A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2692 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 5W (Ta), 312W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB (D²PAK)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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