DMTH10H017LPD-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
$0.68
Available to order
Reference Price (USD)
1+
$0.68191
500+
$0.6750909
1000+
$0.6682718
1500+
$0.6614527
2000+
$0.6546336
2500+
$0.6478145
Exquisite packaging
Discount
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The DMTH10H017LPD-13 by Diodes Incorporated is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate DMTH10H017LPD-13 into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Rds On (Max) @ Id, Vgs: 17.4mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.6nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1986pF @ 50V
- Power - Max: 2.6W (Ta), 93W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PowerDI5060-8 (Type E)
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