IPT65R060CFD7XTMA1
Infineon Technologies
Infineon Technologies
HIGH POWER_NEW
$6.96
Available to order
Reference Price (USD)
1+
$6.95860
500+
$6.889014
1000+
$6.819428
1500+
$6.749842
2000+
$6.680256
2500+
$6.61067
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPT65R060CFD7XTMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPT65R060CFD7XTMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-3
- Package / Case: 8-PowerSFN