DMT6007LFG-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 15A PWRDI3333
$0.48
Available to order
Reference Price (USD)
1+
$0.47863
500+
$0.4738437
1000+
$0.4690574
1500+
$0.4642711
2000+
$0.4594848
2500+
$0.4546985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with DMT6007LFG-13, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMT6007LFG-13 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.2W (Ta), 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
Related Products
Renesas Electronics America Inc
UPA2211T1M-T1-AT
Diodes Incorporated
DMTH4004SPSQ-13
Diodes Incorporated
DMG7702SFG-13
Renesas Electronics America Inc
NP45N06VDK-E1-AY
onsemi
NDCTR40120A
Harris Corporation
IRF731
Infineon Technologies
AUIRFZ48Z
UnitedSiC
UF3C120080K3S
Diodes Incorporated
DMTH8004LPS-13
Nexperia USA Inc.