DMTH8004LPS-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
$0.93
Available to order
Reference Price (USD)
1+
$0.93105
500+
$0.9217395
1000+
$0.912429
1500+
$0.9031185
2000+
$0.893808
2500+
$0.8844975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
DMTH8004LPS-13 by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, DMTH8004LPS-13 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4979 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
Related Products
Nexperia USA Inc.
BUK4D16-20X
IXYS
IXTQ130N20T
UnitedSiC
UJ4C075044K3S
Renesas Electronics America Inc
RJK0355DPA-WS#J0
Toshiba Semiconductor and Storage
TK3P80E,RQ
Renesas Electronics America Inc
2SK1580(0)-T1-AT
Renesas Electronics America Inc
2SK1567-E
Diodes Incorporated
DMP4013LFGQ-13
Renesas Electronics America Inc
RJK2017DPE-00#J3
Goford Semiconductor