DMT35M4LFVW-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V POWERDI333
$0.22
Available to order
Reference Price (USD)
1+
$0.21807
500+
$0.2158893
1000+
$0.2137086
1500+
$0.2115279
2000+
$0.2093472
2500+
$0.2071665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with DMT35M4LFVW-7, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMT35M4LFVW-7 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 982 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
Related Products
Alpha & Omega Semiconductor Inc.
AOD294A
onsemi
NVTFS040N10MCLTAG
Vishay Siliconix
SIS4608LDN-T1-GE3
Harris Corporation
IRF9531
Renesas Electronics America Inc
2SK1094-93
Fairchild Semiconductor
IRF9540
IXYS
MMIX1F210N30P3
Toshiba Semiconductor and Storage
SSM6K208FE,LF
Diodes Incorporated
DMPH4029LFGQ-13
Fairchild Semiconductor