NXH010P120MNF1PG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO
$135.97
Available to order
Reference Price (USD)
1+
$135.96714
500+
$134.6074686
1000+
$133.2477972
1500+
$131.8881258
2000+
$130.5284544
2500+
$129.168783
Exquisite packaging
Discount
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The NXH010P120MNF1PG by onsemi is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate NXH010P120MNF1PG into your systems contact us for more details and pricing.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
- Power - Max: 250W (Tj)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -
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