DMT10H032LDV-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI33
$0.39
Available to order
Reference Price (USD)
1+
$0.39237
500+
$0.3884463
1000+
$0.3845226
1500+
$0.3805989
2000+
$0.3766752
2500+
$0.3727515
Exquisite packaging
Discount
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Discover high-performance DMT10H032LDV-7 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Diodes Incorporated s DMT10H032LDV-7 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
- Power - Max: 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXC)
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