UF3C170400K3S
UnitedSiC
UnitedSiC
SICFET N-CH 1700V 7.6A TO247-3
$9.48
Available to order
Reference Price (USD)
1+
$9.48000
500+
$9.3852
1000+
$9.2904
1500+
$9.1956
2000+
$9.1008
2500+
$9.006
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose UF3C170400K3S by UnitedSiC. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with UF3C170400K3S inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Cascode SiCJFET)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 515mOhm @ 5A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 27.5 nC @ 15 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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