DMPH4029LFG-13
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 40V 8A/22A PWRDI3333
$0.28
Available to order
Reference Price (USD)
1+
$0.28136
500+
$0.2785464
1000+
$0.2757328
1500+
$0.2729192
2000+
$0.2701056
2500+
$0.267292
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMPH4029LFG-13 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMPH4029LFG-13 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 29mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1626 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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