NTHL025N065SC1
onsemi
onsemi
SIC MOS TO247-3L 650V
$22.08
Available to order
Reference Price (USD)
1+
$22.08000
500+
$21.8592
1000+
$21.6384
1500+
$21.4176
2000+
$21.1968
2500+
$20.976
Exquisite packaging
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Discover NTHL025N065SC1, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
- Rds On (Max) @ Id, Vgs: 28.5mOhm @ 45A, 18V
- Vgs(th) (Max) @ Id: 4.3V @ 15.5mA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
- Vgs (Max): +22V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 3480 pF @ 325 V
- FET Feature: -
- Power Dissipation (Max): 348W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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