DMP56D0UFB-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 50V 200MA 3DFN
$0.40
Available to order
Reference Price (USD)
3,000+
$0.12862
6,000+
$0.12213
15,000+
$0.11240
30,000+
$0.10591
75,000+
$0.09617
Exquisite packaging
Discount
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Experience the power of DMP56D0UFB-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, DMP56D0UFB-7 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 4V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.58 nC @ 4 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 50.54 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 425mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1006-3
- Package / Case: 3-UFDFN
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