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TK7E80W,S1X

Toshiba Semiconductor and Storage
TK7E80W,S1X Preview
Toshiba Semiconductor and Storage
MOSFET N-CH 800V 6.5A TO220
$2.56
Available to order
Reference Price (USD)
1+
$2.88000
50+
$2.32500
100+
$2.09250
500+
$1.62750
1,000+
$1.34850
2,500+
$1.30200
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800 V
  • Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

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