DMP3045LFVWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V POWERDI333
$0.22
Available to order
Reference Price (USD)
1+
$0.22489
500+
$0.2226411
1000+
$0.2203922
1500+
$0.2181433
2000+
$0.2158944
2500+
$0.2136455
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover DMP3045LFVWQ-13, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), 19.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
Related Products
Renesas Electronics America Inc
2SK1591-T2B-A
Rohm Semiconductor
RS6G120BGTB1
Taiwan Semiconductor Corporation
TSM043NB04CZ
onsemi
NTMFS4C054NT1G
Micro Commercial Co
MSJPF06N80A-BP
onsemi
NVMYS029N08LHTWG
Toshiba Semiconductor and Storage
TK155E65Z,S1X
onsemi
NVHL040N65S3
Infineon Technologies
IPTG210N25NM3FDATMA1
Micro Commercial Co