DMP2100UQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
$0.10
Available to order
Reference Price (USD)
1+
$0.10098
500+
$0.0999702
1000+
$0.0989604
1500+
$0.0979506
2000+
$0.0969408
2500+
$0.095931
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMP2100UQ-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMP2100UQ-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
- Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 800mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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