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CSD25310Q2

Texas Instruments
CSD25310Q2 Preview
Texas Instruments
MOSFET P-CH 20V 20A 6WSON
$0.65
Available to order
Reference Price (USD)
3,000+
$0.19995
6,000+
$0.18705
15,000+
$0.18060
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 23.9mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-WSON (2x2)
  • Package / Case: 6-WDFN Exposed Pad

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