DMN33D8LT-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 115MA SOT523
$0.07
Available to order
Reference Price (USD)
1+
$0.06907
500+
$0.0683793
1000+
$0.0676886
1500+
$0.0669979
2000+
$0.0663072
2500+
$0.0656165
Exquisite packaging
Discount
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Boost your electronic applications with DMN33D8LT-7, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMN33D8LT-7 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id: 1.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 0.55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 5 V
- FET Feature: -
- Power Dissipation (Max): 240mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
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