BS107PSTZ
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 200V 120MA E-LINE
$1.00
Available to order
Reference Price (USD)
1+
$1.00000
500+
$0.99
1000+
$0.98
1500+
$0.97
2000+
$0.96
2500+
$0.95
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BS107PSTZ by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BS107PSTZ inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 120mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.6V, 5V
- Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 85 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: E-Line (TO-92 compatible)
- Package / Case: E-Line-3
Related Products
Renesas Electronics America Inc
UPA2709AGR-E1-AT
Alpha & Omega Semiconductor Inc.
AOI11S60
Texas Instruments
CSD17579Q5AT
Fairchild Semiconductor
FQB6N60TM
Vishay Siliconix
SQP50P03-07_GE3
onsemi
FQPF13N50C-ON
Vishay Siliconix
SI2343CDS-T1-GE3
onsemi
NTD4863NAT4G
onsemi
FQPF85N06
IXYS