DMN3060LCA3-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 3.9A X4DSN1006-3
$0.11
Available to order
Reference Price (USD)
1+
$0.10575
500+
$0.1046925
1000+
$0.103635
1500+
$0.1025775
2000+
$0.10152
2500+
$0.1004625
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMN3060LCA3-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMN3060LCA3-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 500mA, 8V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.677 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 192 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 790mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X4-DSN1006-3
- Package / Case: 3-XFDFN
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