DMN3053L-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 4A SOT23
$0.11
Available to order
Reference Price (USD)
1+
$0.10718
500+
$0.1061082
1000+
$0.1050364
1500+
$0.1039646
2000+
$0.1028928
2500+
$0.101821
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMN3053L-13 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMN3053L-13 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 676 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 760mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Rohm Semiconductor
RRS075P03FRATB
Vishay Siliconix
SUM110P06-08L-E3
IXYS
IXTR170P10P
Vishay Siliconix
SI7655DN-T1-GE3
Infineon Technologies
IPD90N04S3H4ATMA1
Infineon Technologies
IMW65R030M1HXKSA1
Vishay Siliconix
IRFIZ44GPBF
Diodes Incorporated
DMP3036SSS-13
Renesas Electronics America Inc
HAT2025R-EL-E
Vishay Siliconix