IMW65R030M1HXKSA1
Infineon Technologies
Infineon Technologies
SILICON CARBIDE MOSFET, PG-TO247
$23.35
Available to order
Reference Price (USD)
1+
$23.35000
500+
$23.1165
1000+
$22.883
1500+
$22.6495
2000+
$22.416
2500+
$22.1825
Exquisite packaging
Discount
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Upgrade your electronic designs with IMW65R030M1HXKSA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IMW65R030M1HXKSA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 29.5A, 18V
- Vgs(th) (Max) @ Id: 5.7V @ 8.8mA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 18 V
- Vgs (Max): +20V, -2V
- Input Capacitance (Ciss) (Max) @ Vds: 1643 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 197W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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