DMN3029LFG-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 5.3A PWRDI333-8
$0.17
Available to order
Reference Price (USD)
1+
$0.16658
500+
$0.1649142
1000+
$0.1632484
1500+
$0.1615826
2000+
$0.1599168
2500+
$0.158251
Exquisite packaging
Discount
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Diodes Incorporated presents DMN3029LFG-13, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, DMN3029LFG-13 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 18.6mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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