IXKF40N60SCD1
IXYS
IXYS
MOSFET N-CH 600V 41A I4PAC
$27.86
Available to order
Reference Price (USD)
25+
$16.39120
Exquisite packaging
Discount
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Discover IXKF40N60SCD1, a versatile Transistors - FETs, MOSFETs - Single solution from IXYS, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS i4-PAC™
- Package / Case: i4-Pac™-5 (3 Leads)
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