DMN3009SSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 15A 8SO T&R 2
$0.24
Available to order
Reference Price (USD)
2,500+
$0.27242
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover DMN3009SSS-13, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Nexperia USA Inc.
BUK9M120-100EX
IXYS
IXFH16N50P3
Infineon Technologies
IPWS65R075CFD7AXKSA1
onsemi
NTMYS3D3N06CLTWG
IXYS
IXFX90N60X
Rohm Semiconductor
RD3L220SNFRATL
Infineon Technologies
IPA80R460CEXKSA2
onsemi
NTD60N03-001
Microchip Technology
TN2640N3-G
Infineon Technologies