BUK9M120-100EX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 11.5A LFPAK33
$0.77
Available to order
Reference Price (USD)
1,500+
$0.23113
3,000+
$0.21074
7,500+
$0.19714
10,500+
$0.18355
37,500+
$0.17403
Exquisite packaging
Discount
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Discover high-performance BUK9M120-100EX from Nexperia USA Inc., a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, BUK9M120-100EX delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 119mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 2.05V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 882 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 44W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK33
- Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
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