DMN2310UFB4-7B
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V X2-DFN1006-
$0.05
Available to order
Reference Price (USD)
1+
$0.04675
500+
$0.0462825
1000+
$0.045815
1500+
$0.0453475
2000+
$0.04488
2500+
$0.0444125
Exquisite packaging
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Enhance your circuit performance with DMN2310UFB4-7B, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMN2310UFB4-7B for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 175mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 710mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN1006-3
- Package / Case: 3-XFDFN
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