IPB80P03P4L07ATMA2
Infineon Technologies
Infineon Technologies
MOSFET_(20V 40V) PG-TO263-3
$1.50
Available to order
Reference Price (USD)
1+
$1.49600
500+
$1.48104
1000+
$1.46608
1500+
$1.45112
2000+
$1.43616
2500+
$1.4212
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPB80P03P4L07ATMA2 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPB80P03P4L07ATMA2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.9mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): +5V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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