DMN22M5UFG-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V POWERDI3333
$0.35
Available to order
Reference Price (USD)
1+
$0.35170
500+
$0.348183
1000+
$0.344666
1500+
$0.341149
2000+
$0.337632
2500+
$0.334115
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMN22M5UFG-13 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMN22M5UFG-13 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 27A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 13.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 3926 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 600mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
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