DMN13H750S-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 130V 1A SOT23
$0.19
Available to order
Reference Price (USD)
10,000+
$0.20220
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents DMN13H750S-13, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, DMN13H750S-13 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 130 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 770mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
3LP01SS-TL-E
Micro Commercial Co
MCU18P10Y-TP
Panjit International Inc.
PJQ4401P-AU_R2_000A1
Infineon Technologies
IPA60R380C6XKSA1
onsemi
FDMC8651
Infineon Technologies
IPB60R070CFD7ATMA1
Rectron USA
RM80N20DN
Alpha & Omega Semiconductor Inc.
AOSS21319C
onsemi
NTP85N03G
onsemi