EPC2021ENGR
EPC
EPC
TRANS GAN 80V 60A BUMPED DIE
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with EPC2021ENGR, a reliable Transistors - FETs, MOSFETs - Single by EPC. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, EPC2021ENGR meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 2.5mOhm @ 29A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 14mA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
Related Products
Fairchild Semiconductor
RFD14N05SM9A_NL
IXYS
IXFX88N20Q
onsemi
FQPF7N65C_F105
Infineon Technologies
IPD50N03S2-07
Toshiba Semiconductor and Storage
TK4A60DA(STA4,Q,M)
STMicroelectronics
STW16N65M5
onsemi
FDB9406L-F085
Infineon Technologies
IRLBL1304
Alpha & Omega Semiconductor Inc.
AOT416L
onsemi