Shopping cart

Subtotal: $0.00

CY7C1512KV18-200BZXI

Rochester Electronics, LLC
CY7C1512KV18-200BZXI Preview
Rochester Electronics, LLC
QDR SRAM, 4MX18, 0.45NS
$102.23
Available to order
Reference Price (USD)
1+
$102.23000
500+
$101.2077
1000+
$100.1854
1500+
$99.1631
2000+
$98.1408
2500+
$97.1185
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)

Related Products

Infineon Technologies

CY7C1412KV18-300BZC

Infineon Technologies

CY14B116N-BZ25XI

Microchip Technology

11AA080T-I/MNY

Renesas Electronics America Inc

71T75802S133BGG

Alliance Memory, Inc.

AS6C62256-55SIN

Microchip Technology

SST25VF040B-50-4C-S2AF-T

Infineon Technologies

S79FL512SDSMFVG03

Infineon Technologies

CY7C027V-15AXI

Renesas Electronics America Inc

7133LA20PFG

Infineon Technologies

S29JL032J60TFI020

Top