CY14B116N-BZ25XI
Infineon Technologies
Infineon Technologies
NO WARRANTY
$27.98
Available to order
Reference Price (USD)
1+
$84.77000
10+
$76.30600
25+
$74.64240
50+
$73.08000
105+
$63.95762
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your memory solutions with Infineon Technologies CY14B116N-BZ25XI ICs, built for speed and reliability. Perfect for data centers, automotive infotainment, and wearable tech, these ICs include features such as high bandwidth, low latency, and long-term durability. Infineon Technologies CY14B116N-BZ25XI is your trusted partner in advanced memory technology. Inquire now to discover how we can meet your specific needs!
Specifications
- Product Status: Active
- Memory Type: Non-Volatile
- Memory Format: NVSRAM
- Technology: NVSRAM (Non-Volatile SRAM)
- Memory Size: 16Mb (1M x 16)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 25ns
- Access Time: 25 ns
- Voltage - Supply: 2.7V ~ 3.6V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 165-LBGA
- Supplier Device Package: 165-FBGA (15x17)
Related Products
Microchip Technology
11AA080T-I/MNY
Renesas Electronics America Inc
71T75802S133BGG
Alliance Memory, Inc.
AS6C62256-55SIN
Microchip Technology
SST25VF040B-50-4C-S2AF-T
Infineon Technologies
S79FL512SDSMFVG03
Infineon Technologies
CY7C027V-15AXI
Renesas Electronics America Inc
7133LA20PFG
Infineon Technologies
S29JL032J60TFI020
Microchip Technology
25AA160C-I/SN
Micron Technology Inc.