PHB32N06LT,118
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 34A D2PAK
$1.44
Available to order
Reference Price (USD)
800+
$0.62540
1,600+
$0.56513
2,400+
$0.52745
5,600+
$0.50108
20,000+
$0.48224
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Nexperia USA Inc. presents PHB32N06LT,118, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, PHB32N06LT,118 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 5V
- Rds On (Max) @ Id, Vgs: 37mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1280 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 97W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPP65R190C7
Diodes Incorporated
DMN2991UFZ-7B
Infineon Technologies
IPC100N04S5L1R1ATMA1
onsemi
FDS8884
onsemi
NVMFS6D1N08HT1G
Infineon Technologies
IPN60R360PFD7SATMA1
Vishay Siliconix
SQ2362ES-T1_GE3
Infineon Technologies
SPP02N60C3
onsemi
NVTFS4C25NWFTAG
Infineon Technologies