BUK9Y14-80E,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 80V 62A LFPAK56
$1.28
Available to order
Reference Price (USD)
1,500+
$0.44765
3,000+
$0.41780
7,500+
$0.39691
10,500+
$0.38199
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of BUK9Y14-80E,115, a premium Transistors - FETs, MOSFETs - Single from Nexperia USA Inc.. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BUK9Y14-80E,115 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 147W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
Vishay Siliconix
SIR414DP-T1-GE3
Goford Semiconductor
G12P04K
Panjit International Inc.
PJP60R390E_T0_00001
Nexperia USA Inc.
BUK7M22-80EX
Renesas Electronics America Inc
2SK2552B-T1-AT
Taiwan Semiconductor Corporation
TSM60N600CI C0G
Vishay Siliconix
SI4447DY-T1-GE3
Nexperia USA Inc.
BUK7M10-40EX
onsemi
NTMFS5C612NLT1G-UIL5
Infineon Technologies