CSD17318Q2T
Texas Instruments
Texas Instruments
MOSFET N-CHANNEL 30V 25A 6WSON
$1.15
Available to order
Reference Price (USD)
1+
$1.15000
500+
$1.1385
1000+
$1.127
1500+
$1.1155
2000+
$1.104
2500+
$1.0925
Exquisite packaging
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Discover CSD17318Q2T, a versatile Transistors - FETs, MOSFETs - Single solution from Texas Instruments, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
- Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 16W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WSON (2x2)
- Package / Case: 6-WDFN Exposed Pad
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