IXFT16N80P
IXYS
IXYS
MOSFET N-CH 800V 16A TO268
$8.97
Available to order
Reference Price (USD)
30+
$5.86300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS presents IXFT16N80P, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXFT16N80P delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268AA
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Diodes Incorporated
DMN6017SK3-13
Infineon Technologies
AUIRF1405ZL
Fairchild Semiconductor
NDS8426A
onsemi
FDMS86200
onsemi
FQB6N80TM
Fairchild Semiconductor
FQI5N20TU
Texas Instruments
CSD22205L
STMicroelectronics
STF12N65M5
Panjit International Inc.
PJA3411-AU_R1_000A1
Diodes Incorporated